The most common form of IGBT is actually a module, not a single IGBT.
A module has three basic characteristics:
● Multiple chips are assembled in an insulated manner on a metal substrate;
● They are encapsulated in a hollow plastic shell, with the air insulation material being high-voltage silicone grease or other soft insulating materials;
● For products from the same manufacturer and within the same technology family, the technical characteristics of an IGBT module are essentially the same as those of a single IGBT of the same specifications.

The main advantages of modules are as follows:
● Parallel connection of multiple IGBT chips increases the IGBT current rating.
● Combining multiple IGBT chips in specific circuit configurations, such as half-bridge and full-bridge, reduces the complexity of external circuit connections.
● Placing multiple IGBT chips on the same metal substrate is like adding a heat spreader between the independent heat sink and the IGBT chips, resulting in more reliable operation.
● The multiple IGBT chips within a module have been screened by the module manufacturer, resulting in better parameter consistency than commercially available discrete components.
● Compared to external connections between multiple discrete IGBTs, connecting multiple IGBT chips within a module allows for better circuit layout and lower lead inductance.
● The module's external lead terminals are more suitable for high-voltage and high-current connections. Within the same product series from the same manufacturer, the module's maximum voltage rating is generally one or two levels higher than that of a single IGBT. For example, if the maximum voltage specification for a single IGBT is 1700V, the module can be offered in 2500V, 3300V, or even higher voltage specifications.

The core technology of the IGBT lies in the single IGBT, not the module. A module is more like an assembly—a combination of die and assembly.

Differences between single IGBTs, IGBT modules, and IPM modules
1. Single IGBT: IGBTs are packaged smaller than modules, with currents typically below 100A. Common packages include TO247.
2. IGBT modules: Modular packaging integrates multiple IGBTs into a single package. 3. PIM module: Integrated rectifier bridge + brake unit (PFC) + three-phase inverter (IGBT bridge)
4. IPM module: An intelligent power module, an IGBT module with integrated gate-level drivers and numerous protection functions (overtemperature protection, overvoltage, overcurrent, undervoltage protection, etc.)

IGBT single transistor: A discrete IGBT, packaged smaller than a module, typically with a current below 50A. Common packages include TO247 and TO3P.
IGBT module: An IGBT chip in a modular package. Common options include 1-in-1, 2-in-1, and 6-in-1.
PIM module: Integrated rectifier bridge + brake unit + three-phase inverter
IPM module: An intelligent power module, an IGBT module with integrated gate-level drivers and protection functions (thermal protection, overcurrent protection, etc.)

A cell or chip cell is the smallest fully functional unit on a wafer. While Chinese literature generally translates this as "yuan cellular," this article refers to it as a chip unit. Each chip unit is a complete microtransistor, a miniature IGBT with a four-layer P-N-P-N structure.

The smallest unit after wafer segmentation, the chip units that make up a single IGBT or a module unit, are collectively referred to as an IGBT die.

In an IGBT module, an IGBT die is called a module unit, also known as a module unit or module die. The difference between a module unit and an IGBT die lies in the final product: a module unit does not have a separate package, while the die has its own package, forming an IGBT.

The module's control terminals are not limited to the gate G. They also include electrodes that provide a reference potential for the gate drive signal, such as the secondary emitter (also known as the second emitter, which, like the emitter E on the main wiring terminal, is directly connected from the terminal electrode on the chip inside the module to reduce the impact of high current in the main circuit on the gate). For multi-level circuit modules such as half-bridge and full-bridge circuits, control electrodes also include C1, E2, etc. In short, the control electrode is used in conjunction with the gate and cannot be connected to the main circuit to carry high current.

Some manufacturers also offer high-voltage, high-current IGBTs in flat-plate press-fit packages, similar to their high-current SCRs, GTOs, and IGCTs. These single-transistor products offer higher power capacity than modules. Should they be called modules or single-transistors? The industry generally considers them single-transistor. Because simple parallel connection of multiple chips is only a small part of the module family, they are generally referred to as single-transistor modules. Flat-plate press-fit packages, also known as clip-on packages, require a custom heat sink.