DLS-83D Deep Level Spectrometer for Semiconductor Defect Analysis
High-sensitivity deep level spectrometer for semiconductor defect characterization, impurity identification, and deep-level transient spectroscopy analysis in wafer and materials applications.
Product Overview
The system is based on deep-level transient spectroscopy (DLTS), a characterization platform for studying electrically active defects, also known as charge carrier traps, in semiconductors. It is designed to support advanced contamination analysis and defect investigation in semiconductor materials and structures.
DLS-83D allows automatic control of experimental parameters and automatic evaluation of impurity concentration, activation energy, and capture cross section on semiconductor samples. This helps improve analysis efficiency while supporting accurate defect and contamination identification.
In CMOS imaging technology, the increasing requirement for the detection of metallic contamination in silicon pushes DLTS techniques toward more sensitive measurements. DLS-83D is built to address this need with high sensitivity, flexible control, and broad measurement capability for advanced semiconductor analysis workflows.
Key Specifications
- TechniqueDeep-level transient spectroscopy (DLTS)
- SensitivityBelow 10¹ p atoms/cm³
- ControlDigital or analog settings
- EvaluationAutomatic evaluation of impurity concentration, activation energy, and capture cross section
- DatabaseComplete library database for accurate contamination identification
- Cryostat Range30 K to 325 K, 80 K to 550 K / 800 K, and 80 K to 450 K options
- ApplicationsTemperature scan, frequency scan, depth profiling, C-V, I-V, capture cross section, optical injections, MOS interface state density distribution measurements
Main Features
High Defect Sensitivity
Supports very high sensitivity measurement below 10¹ p atoms/cm³ for detection of trace contaminant levels and electrically active defects in semiconductor samples.
Automatic Evaluation
Automatically evaluates impurity concentration, activation energy, and capture cross section to support efficient and repeatable semiconductor defect analysis.
Multiple Cryostat Options
Supports multiple cryostat configurations for different temperature ranges, enabling flexible low-temperature and elevated-temperature semiconductor characterization.
Broad Measurement Modes
Designed for temperature, frequency, electrical, and optical defect analysis workflows across a wide range of semiconductor research and wafer analysis applications.
Technology Background
Deep-level transient spectroscopy (DLTS) is the characterization platform for studying electrically active defects, known as charge carrier traps, in semiconductors. It is widely used to identify and analyze deep-level impurities and defect states that affect semiconductor device performance.
In CMOS imaging technology, the industry faces a pressing requirement for detection of metallic contamination in silicon. This creates demand for DLTS techniques that can deliver more sensitive measurements and more reliable defect identification for advanced semiconductor process control and materials research.
Benefits
- SensitivityHigh sensitivity below 10¹ p atoms/cm³ for trace contamination detection
- Ease of OperationControlled by digital or analog settings for real operational flexibility
- Identification AccuracyComplete library database for accurate contamination identification
Cryostat Options
Closed Cycle He-Cryostat
Temperature range from 30 K to 325 K for low-temperature defect characterization and semiconductor trap analysis.
Automatic LN � Cryostat
Controlled LN � flow cryostat with temperature range from 80 K to 550 K / 800 K for broader thermal measurement capability.
Simple Bath Type LN � Cryostat
Temperature range from 80 K to 450 K for practical cryogenic semiconductor defect and impurity analysis workflows.
Flexible Temperature Coverage
Multiple cryostat configurations help adapt the DLS-83D to different semiconductor materials, defect states, and temperature-dependent characterization requirements.
Application Focus
Semiconductor Defect Characterization
Used for analysis of electrically active defects, charge carrier traps, and contamination effects in semiconductor materials and wafer structures.
Temperature and Frequency Scans
Supports complete temperature scan and frequency scan workflows for detailed deep-level spectroscopy and trap-state analysis.
Electrical Characterization
Suitable for depth profiling, C-V, I-V, and capture cross section measurements in advanced semiconductor materials research and process monitoring.
Optical and MOS Analysis
Supports optical injections and MOS interface state density distribution measurements for broader semiconductor defect and interface evaluation.
